Samsung, the global leader in innovation technology, is set to redefine memory industry standards at the IEEE International Solid-State Circuit conference in 2024. The South Korean giant's early announcement of the launch of revolutionary memory products promises to mark a new chapter in the evolution technological.
At the heart of this innovation is the unveiling of GDDR7 memory, which has already captured industry attention for its potential to enhance the performance of high-density computing systems. However, Samsung doesn't stop there. The company is set to impress even more by introducing a super-fast DDR5 memory chip that promises to be a game-changer in memory technology.
The 5Gb DDR32 DRAM, developed using advanced 12 nanometer (nm) process technology, is a major leap forward from its predecessors. With twice the capacity of 5Gb DDR16 DRAM, this new chip offers a high-capacity memory solution in the same package size, underscoring Samsung's commitment to pushing the boundaries of technological innovation.
The technical details of the DDR5 chip revealed by Samsung are impressive. The I/O speed of up to 8000Mbps per pin and the symmetric-mosaic architecture, together with the use of the fifth generation 10nm foundry node, specially adapted for DRAM products, are evidence of the company's tireless research and development efforts.
Samsung will launch new faster DDR5 RAM modules
SangJoon Hwang, executive vice president of DRAM Product & Technology at Samsung Electronics, emphasized the importance of this progress. “With our 32nm class 12Gb DRAM, we have secured a solution that will enable DRAM modules up to 1 terabyte (TB), allowing us to be ideally positioned to serve the growing needs for large DRAM capability in the era of AI and big data,” Hwang said.
This advanced memory technology not only allows 128GB modules to be produced without the need for the Through Silicon Via (TSV) process, but also reduces power consumption by approximately 10%. This is welcome news for data centers, which are facing ever-increasing power demands exacerbated by AI processing workloads.
The new DDR5 modules enable 32GB and 48GB DIMMs at DDR5-8000 speeds in single-rank configurations, and also support 64GB and 96GB DIMMs in dual-rank configurations, opening up new horizons for the performance of computer systems.
As the IEEE International Solid-State Circuit conference approaches, expectations are high for Samsung to provide more details on this revolutionary technology. In an era marked by ever-increasing demands for fast processing and energy efficiency, Samsung's memory innovations promise to provide critical solutions to the technological challenges of the future.
